SUBSTRATE PROCESSING APPARATUS

• Main Authors: KIKUCHI YOSHIYUKI, SAMUKAWA SEIJI, ISHIBASHI KIYOTAKA
• Format: Patent
• Language: English; Korean
• Published: 24.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The purpose of the present invention is to uniformly process a substrate within a surface by using a neutral particle. According to the present invention, a substrate processing apparatus (1) for processing a wafer (W) inside a processing container (11) by plasma comprises: a plasma generation chamber (U) to generate plasma inside a processing container (11); a wafer chuck (10) arranged to face the plasma generation chamber (U), and to maintain the wafer (W) inside the processing container (11); a separation plate (15) arranged between the plasma generation chamber (U) and the wafer chuck (10), to generate a neutral particle by neutralizing the plasma generated in the plasma generation chamber (U), and having a plurality of openings (15a) to irradiate the neutral particle to the wafer (W) maintained in the wafer chuck (10); and a directional adjustment mechanism to adjust directivity of the neutral particle introduced to the wafer chuck (10) from the separation plate (15) in order that a peak value of incidence angle distribution of the neutral particle on the wafer (W) maintained by the wafer chuck (10) is a position shifted from the normal line direction of the wafer (W), and a plurality of the peak values are distributed in a position where the normal line direction is located therebetween. 본 발명은 중성 입자를 이용하여 면 내 균일하게 기판 처리를 행하는 것을 목적으로 한다. 처리 용기(11) 내의 웨이퍼(W)를 플라즈마에 의해 처리하는 기판 처리 장치(1)는, 처리 용기(11) 내에 플라즈마를 생성하는 플라즈마 발생실(U)과, 플라즈마 발생실(U)에 대향하여 배치되고, 처리 용기(11) 내에 있어서 웨이퍼(W)를 유지하는 웨이퍼 척(10)과, 플라즈마 발생실(U)과 웨이퍼 척(10) 사이에 배치되고, 플라즈마 발생실(U)에서 생성된 플라즈마를 중성화하여 중성 입자를 생성하며, 또한 상기 중성 입자를 웨이퍼 척(10)에 유지된 웨이퍼(W)에 조사하는 개구(15a)가 복수 형성된 분리판(15)과, 웨이퍼 척(10)에 의해 유지되는 웨이퍼(W) 상에서의 중성 입자의 입사 각도 분포의 피크값이 웨이퍼(W)의 법선 방향으로부터 어긋난 위치이고, 또한 상기 피크값이 법선 방향을 사이에 둔 위치에 복수 분포하도록, 분리판(15)으로부터 웨이퍼 척(10)측에 도입되는 중성 입자의 지향성을 조정하는 지향성 조정 기구를 갖는다.