FORMULATIONS OF SOLUTIONS AND PROCESSES FOR FORMING A SUBSTRATE INCLUDING AN ARSENIC DOPANT

• Main Authors: MOODY LESLIE SHANE, POLLARD KIMBERLY DONA, MACKENZIE PETER BORDEN, LIU JUNJIA, HOCHSTETLER SPENCER ERICH
• Format: Patent
• Language: English; Korean
• Published: 08.07.2015
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; ORGANIC CHEMISTRY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

도판트를 포함하는 기판을 형성시키기 위한 용액의 제형 및 방법을 개시한다. 특정 실시태양에서, 상기 도판트는 비소(As)를 포함할 수 있다. 하나의 실시태양에서, 용매 및 도판트를 포함하는 도판트 용액을 제공한다. 특정 실시태양에서, 상기 도판트 용액은 상기 기판 표면의 원자가 상기 도판트 용액 중의 비소-함유 화합물에 결합되게 할 수 있는 최소 온도와 적어도 대략적으로 동일한 인화점을 가질 수 있다. 하나의 실시태양에서, 상기 기판 표면의 복수의 규소 원자들이 상기 비소-함유 화합물에 공유 결합된다. Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.