HARDMASK COMPOSITION, METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS

• Main Authors: LEE, CHUNG HEON, CHOI, YOO JEONG, KIM, YUN JUN, PARK, YOU JUNG, SONG, HYUN JI, YOON, YONG WOON, MOON, JOON YOUNG, SHIN, SEUNG WOOK, PARK, YU SHIN
• Format: Patent
• Language: English; Korean
• Published: 08.07.2015
• Subjects: ADHESIVES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL PAINT OR INK REMOVERS; CHEMISTRY; CINEMATOGRAPHY; COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS; CORRECTING FLUIDS; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; FILLING PASTES; HOLOGRAPHY; INKS; MATERIALS THEREFOR; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; ORIGINALS THEREFOR; PAINTS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; POLISHES; SEMICONDUCTOR DEVICES; USE OF MATERIALS THEREFOR; WOODSTAINS

Provided are a polymer comprising a portion represented by one selected from 1a to 1c; a monomer represented by the below formula 2; and a hard mask composition comprising a solvent. In the formula 1a, 1b, 1c and 2, R^(1a), R^(1b), R^(4a), R^(4b), R^(2a), R^(2b), R^(5a), R^(5b) and R^3 are as defined in the specification. 하기 화학식 1a 내지 1c 중에서 선택된 어느 하나로 표현되는 부분을 포함하는 중합체, 하기 화학식 2로 표현되는 모노머, 그리고 용매를 포함하는 하드마스크 조성물을 제공한다. [화학식 1a][화학식 1b][화학식 1c][화학식 2]상기 화학식 1a, 1b, 1c 및 2에서, R, R, R, R, R, R, R, R및 R은 명세서에서 정의한 바와 같다.