IMAGE SENSOR DEVICES, METHODS OF MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE MANUFACTURING METHODS

Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes the step of bonding a first semiconductor wafer to a second semiconductor wafer, the first semiconductor...

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Main Authors LIN JENG SHYAN, CHEN U TING, YAUNG DUN NIAN, TSAI SHU TING, CHEN SZU YING, LIU JEN CHENG
Format Patent
LanguageEnglish
Korean
Published 26.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes the step of bonding a first semiconductor wafer to a second semiconductor wafer, the first semiconductor wafer comprising a substrate and a wiring structure coupled to the substrate. The method includes the step of removing a portion of the substrate from the first semiconductor wafer to expose a portion of the wiring structure. 이미지 센서 소자, 그 제조 방법 및 반도체 소자 제조 방법이 개시된다. 일부 실시예에서, 반도체 소자의 제조 방법은 기판과 해당 기판에 결합된 배선 구조를 포함하는 제1 반도체 웨이퍼를 제2 반도체 웨이퍼에 접합하는 단계를 포함한다. 상기 방법은 상기 배선 구조의 일부를 노출시키도록 상기 제1 반도체 웨이퍼로부터 상기 기판의 일부를 제거하는 단계를 포함한다.
Bibliography:Application Number: KR20140182389