SEMICONDUCTOR CHIP WITH THROUGH-SILICON VIAS, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

Provided is a semiconductor device with silicon-through vias. The device includes a substrate which includes a bottom semiconductor layer, a buried insulation layer and a top semiconductor layer, electronic elements which are formed on the top semiconductor layer, a vertical electrode structure whic...

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Bibliographic Details
Main Authors KANG, SIN WOO, CHO, SUNG DONG
Format Patent
LanguageEnglish
Korean
Published 04.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device with silicon-through vias. The device includes a substrate which includes a bottom semiconductor layer, a buried insulation layer and a top semiconductor layer, electronic elements which are formed on the top semiconductor layer, a vertical electrode structure which includes vertical electrodes which pass through the substrate, and an electrode separation pattern which surrounds the vertical electrode structure on the view of a plane and is in direct contact with the buried insulation layer by passing through the top semiconductor layer on a vertical view. 실리콘-관통 비아들을 갖는 반도체 장치가 제공된다. 이 장치는 하부 반도체막, 매몰 절연막, 및 상부 반도체막을 구비하는 기판, 상부 반도체막에 형성된 전자 소자들, 기판을 관통하는 수직 전극들을 포함하는 수직 전극 구조체, 그리고, 평면적으로 볼 때 수직 전극 구조체를 둘러싸고 수직적으로 볼 때 상부 반도체막을 관통하여 매몰 절연막에 직접 접촉하는 전극 분리 패턴을 포함할 수 있다.
Bibliography:Application Number: KR20130144657