THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND DISPLAY INCLUDING THE SAME

Disclosed are a thin film transistor and a manufacturing method thereof. The disclosed thin film transistor includes a gate electrode, a channel layer, a gate insulation layer which is formed between the gate electrode and the channel layer, a source electrode, and a drain electrode. The gate electr...

Full description

Saved in:
Bibliographic Details
Main Authors SON, KYOUNG SEOK, RYU, MYUNG KWAN, SEO, SEOK JUN
Format Patent
LanguageEnglish
Korean
Published 03.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Disclosed are a thin film transistor and a manufacturing method thereof. The disclosed thin film transistor includes a gate electrode, a channel layer, a gate insulation layer which is formed between the gate electrode and the channel layer, a source electrode, and a drain electrode. The gate electrode includes at least one non-gate region to which a current is not applied between a source contact region in contact with the source electrode and the channel layer and a drain contact region in contact with the drain electrode and the channel layer. 박막 트랜지스터 및 그 제조 방법이 개시된다. 개시된 박막 트랜지스터는, 게이트 전극과, 채널층과, 게이트 전극과 채널층 사이에 구비된 게이트 절연층 및, 소스 전극 및 드레인 전극;을 포함하며, 게이트 전극은, 소스 전극과 채널층이 컨택되는 소스컨택 영역 및 드레인 전극과 채널층이 컨택되는 드레인컨택 영역 사이에, 게이트 전압이 인가되지 않는 적어도 하나의 비게이트 영역을 포함한다.
Bibliography:Application Number: KR20130144247