MAGNETIC RESISTANCE STRUCTURE, METHOD FOR MANUFACTURING THE MAGNETIC RESISTANCE STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME

• Main Authors: KIM, MIN WOO, WANG MIN, WU QINKE, SONG, YOUNG JAE, JANG, SUNG KYU, JEON, IN SU, LEE, SUNG JOO, JUNG, SEONG JUN, SUH, HWAN SOO
• Format: Patent
• Language: English; Korean
• Published: 22.05.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed are a magnetic resistance structure, a manufacturing method thereof, and an electronic device including the same. The disclosed method for manufacturing the magnetic resistance structure includes the steps of: forming a hexagonal boron nitride layer; forming a graphene layer on the boron nitride layer; forming a first magnetic material layer between the graphene layer and the boron nitride layer by an intercalation process; and forming a second magnetic material layer on the graphene layer. 자기저항 구조체 및 그 제조 방법, 이를 구비하는 전자소자가 개시된다. 개시된 자기저항 구조체 제조 방법은, 육방정계 질화 붕소층을 형성하는 단계와, 질화 붕소층 상에 그래핀층을 형성하는 단계와, 인터칼레이션 공정에 의해 질화 붕소층과 그래핀층 사이에 제1자성물질층을 형성하는 단계와, 그래핀층 상에 제2자성물질층을 형성하는 단계를 포함한다.