METHOD FOR FORMING AN ELECTRODE ON N-TYPE NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACUTRING THE SAME

• Main Authors: LIM, WAN TAE, KIM, TAE HUN, KIM, SUNG JOON, LEE, WAN HO, JANG, TAE SUNG, SUNG, YOUNG KYU, PARK, TAE YOUNG
• Format: Patent
• Language: English; Korean
• Published: 15.05.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to one side of the present invention, a method for forming an electrode on an n-type nitride semiconductor is provided to provide a new technology to treat a surface where the electrode will be formed to generate an ohmic contact with the n-type nitride semiconductor, by comprising the steps of: treating the surface of the n-type nitride semiconductor with inert gas plasma for a nitrogen air gap surface layer lacking a nitrogen substance to be formed; treating the surface where the nitrogen air gap surface layer is formed with gas plasma containing oxygen for a nitride film with oxygen to be formed; and forming the electrode on the nitride film with oxygen. 본 발명의 일 측면은, 질소 성분이 결핍된 질소공극 표면층이 형성되도록 n형 질화물 반도체의 표면을 비활성 기체 플라즈마로 처리하는 단계와, 산소가 첨가된 질화물막이 형성되도록 상기 질소공극 표면층이 형성된 표면을 산소 함유 기체 플라즈마로 처리하는 단계와, 상기 산소가 첨가된 질화물막에 전극을 형성하는 단계를 포함하는 n형 질화물 반도체의 전극 형성방법을 제공한다.