IMAGING APPARATUS, SOLID STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING THE SAME

• Main Authors: OSHIYAMA ITARU, ANDO TAKASHI, IKEDA HARUMI, HIYAMA SUSUMU, YAMAGUCHI TETSUJI, OHGISHI YUKO
• Format: Patent
• Language: English; Korean
• Published: 07.04.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention allows realization of a sufficient hole accumulation layer and reduction of parasitic current at the same time. This invention comprises a film that reduces the interface state (21) formed on the photosphere (12) and the light receiving surface (12s); a film with negative charges (22) formed on the film that reduces the interface state (21); and the charge coupled device 1 including the photosphere (12) that converts the incident light photo-electrically formed on the hole accumulation layer (23) on the side of the photosphere (12) and the light receiving surface (12s). 본 발명은 충분한 홀 축적층의 실현과 암전류의 저감을 동시에 실시 가능하게 한다. 본 발명은 수광부(12)의 수광면(12s)에 형성된 계면 준위를 낮추는 막(21), 상기 계면 준위를 낮추는 막(12) 상에 형성된 음전하를 띄는 막(22), 상기 수광부(12)의 수광면(12s) 측에 홀 축적은(23)이 형성되어 있는, 입사광을 광전 변환(photoelectric conversion)하는 수광부(12)를 포함하는 고체 촬상 장치 1에 관한 것이다.