CHEMICAL MECHANICAL POLISHING PAD

Provided is a chemical mechanical polishing pad which includes a polishing layer; a hardened layer; and includes a hot melt adhesive of combining the polishing layer and the hardened layer. Here, the polishing layer includes specific gravity of more than 0.6; a shore D hardness of 60 to 90; fracture...

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Main Authors JOHN G. NOWLAND, DARRELL STRING, JAMES MURNANE, MOHAMMAD T. ISLAM, FENGJI YEH, MATTHEW RICHARD VANHANEHEM, MARTY DEGROOT, BAINIAN QIAN, MICHELLE K. JENSEN, JEFFREY JAMES HENDRON
Format Patent
LanguageEnglish
Korean
Published 11.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:Provided is a chemical mechanical polishing pad which includes a polishing layer; a hardened layer; and includes a hot melt adhesive of combining the polishing layer and the hardened layer. Here, the polishing layer includes specific gravity of more than 0.6; a shore D hardness of 60 to 90; fracture elongation of 100 to 300%; and shows specific combination of initial hydrolysis stability and long-term hydrolysis instability.
Bibliography:Application Number: KR20140112165