SOURCE AND DRAIN STRESSORS WITH RECESSED TOP SURFACES

An IC structure includes a gate stack on a semiconductor substrate, and a silicon germanium region which is extended into the semiconductor substrate and is adjacent to the gate stack. The silicon germanium region has an upper surface. The center part of the upper surface is recessed from the edge p...

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Bibliographic Details
Main Authors SUNG HSUEH CHANG, LI KUN MU, LI CHII HORNG, LEE TZE LIANG, KWOK TSZ MEI
Format Patent
LanguageEnglish
Korean
Published 11.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An IC structure includes a gate stack on a semiconductor substrate, and a silicon germanium region which is extended into the semiconductor substrate and is adjacent to the gate stack. The silicon germanium region has an upper surface. The center part of the upper surface is recessed from the edge part of the upper surface to form a recess. The edge part is in the opposite side of the center part.
Bibliography:Application Number: KR20130151572