CMOS IMAGE SENSOR HAVING OPTICAL BLOCK AREA

• Main Authors: HAN, HAE WOOK, DO, YOUNG WOONG, LIM, SU HWAN, KIM, DO HWAN, LEE, WON JUN
• Format: Patent
• Language: English; Korean
• Published: 29.01.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a CMOS image sensor having an optical block area set in a pixel array. A CMOS image sensor according to the present invention includes a pixel array having a plurality of pixels formed on a substrate, and a ultraviolet ray pass filter formed on pixels formed in an optical block area in the pixel array, wherein the optical block area blocks light incident from an outside, wherein the ultraviolet ray pass filter includes first and second insulating layers made of an insulating material, and a metal layer formed between the first and second insulating layers, the metal layer includes a plurality of metal chips and spaces surrounding each metal chip, and the metal chips are arranged in the same direction. In addition, ultraviolet rays incident on the optical block area are irradiated onto the pixels formed in the optical block area through the spaces of the metal layer.