NITRIDE SEMICONDUCTOR AND METHOD THEREOF

The present specification provides a semiconductor device with a structure to suppress the progression of potentials and a defect due to the difference of a lattice coefficient between a substrate and a nucleation layer by growing an InAlGaN intermediate layer, including: an AlGaN insertion layer an...

Full description

Saved in:
Bibliographic Details
Main Authors CHO, SEONG MOO, JANG, TAE HOON, KIM, JAE MOO, HWANG, EU JIN, KIM, JUN HO
Format Patent
LanguageEnglish
Korean
Published 05.01.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present specification provides a semiconductor device with a structure to suppress the progression of potentials and a defect due to the difference of a lattice coefficient between a substrate and a nucleation layer by growing an InAlGaN intermediate layer, including: an AlGaN insertion layer and a plurality of InAlGaN layers between a nucleation layer and a channel layer and a manufacturing method thereof. For this, the semiconductor device according to one embodiment of the present invention includes an AlN layer, an InAlGaN intermediate layer which is formed on the AlN layer, a GaN channel layer which is formed on the InAlGaN intermediate layer, and an AlGaN barrier layer which is formed on the GaN channel layer. The InAlGaN intermediate layer includes a plurality of InxAlyGa1-x-y layer (0<=x,y<=1) and an AlzGa1-zN insertion layer (0<=z<=1) between at least two InxAlyGa1-x-yN layers among the InxAlyGa1-x-yN layers.
Bibliography:Application Number: KR20130073270