HYBRID SEMICONDUCTOR PACKAGE
A semiconductor package includes a substrate, an RF semiconductor die which is attached to the first side of the substrate, a capacitor which is attached to the first side of the substrate, and a first terminal which is formed on the first side of the substrate. The semiconductor package further inc...
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Main Authors | , , , |
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Format | Patent |
Language | English Korean |
Published |
01.12.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor package includes a substrate, an RF semiconductor die which is attached to the first side of the substrate, a capacitor which is attached to the first side of the substrate, and a first terminal which is formed on the first side of the substrate. The semiconductor package further includes a copper or aluminum bonding wire or ribbon which connects the first terminal to the output of the RF semiconductor die and an Au bonding wire or ribbon which connects the capacitor to the output of the RF semiconductor die. The Au bonding wire or ribbon is designed to receive RF joule heat which is larger than the RF joule heat of the copper or aluminum bonding wire or ribbon in the operation of the RF semiconductor die. Also, described is a corresponding manufacturing method. |
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Bibliography: | Application Number: KR20140060504 |