SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A manufacturing method of a semiconductor device includes forming an active pin by patterning a substrate, forming a sacrifice gate pattern traversing the active pin on the substrate, forming an interlayer insulating film covering the sacrifice gate pattern, forming a gap area by exposing the active...

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Bibliographic Details
Main Authors PARK, JAE HOO, CHA, DONG HO, SUK, SUNG DAE, HA, DAE WON
Format Patent
LanguageEnglish
Korean
Published 20.11.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method of a semiconductor device includes forming an active pin by patterning a substrate, forming a sacrifice gate pattern traversing the active pin on the substrate, forming an interlayer insulating film covering the sacrifice gate pattern, forming a gap area by exposing the active pin in the interlayer insulating film by removing the sacrifice gate pattern, and forming an insulating pattern between the substrate and the active pin by oxidizing part of the active pin exposed by the gap area.
Bibliography:Application Number: KR20130053207