SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

• Main Authors: HWANG, YOO SANG, KIM, DAE IK, KIM, HYOUNG SUB, LEE, DONG JIN, KIM, KYUNG EUN, SON, NAK JIN, HWANG, JI HYE, KIM, JI YOUNG, JANG, SUNG HO, KIM, KANG UK
• Format: Patent
• Language: English; Korean
• Published: 12.11.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a semiconductor device and a method of fabricating the same. More particularly, the present invention relates to a semiconductor device and a method of fabricating the same to simplify processes. A semiconductor device according to an embodiment of the present invention includes a substrate which includes a cell array region and a peripheral region; a cell gate electrode formed in the substrate of the cell array region; a first peripheral gate electrode formed in the substrate of the peripheral region; and first peripheral source/drain regions adjacent to the upper surface of the substrate at both sides of the peripheral gate electrode. According to an embodiment of the present invention, the lower surface of the first peripheral gate electrode has a recess structure.