METHOD OF MANUFACTURING FOR TFT AND TFT THEREOF, AND METHOD OF MANUFACTURING FOR ORGANIC LUMINESCENCE DISPLAY AND ORGANIC LUMINESCENCE DISPLAY THEREOF
The present invention relates to a method for manufacturing a thin film transistor, a method for manufacturing an organic light emitting display device including the same, and an organic light emitting display device manufactured by the same. According to an embodiment of the present invention, the...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
28.10.2014
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method for manufacturing a thin film transistor, a method for manufacturing an organic light emitting display device including the same, and an organic light emitting display device manufactured by the same. According to an embodiment of the present invention, the method for manufacturing a thin film transistor comprises the steps of: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulating layer on the substrate to cover the oxide semiconductor pattern; removing the insulating layer on the second region by patterning; increasing a carrier concentration of the first region of the oxide semiconductor pattern by heat treatment; forming a gate electrode on the insulating layer to be overlapped with the second region while being insulated from the oxide semiconductor pattern; and forming a source electrode and a drain electrode in contact with the first region while being insulated from the gate electrode. |
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Bibliography: | Application Number: KR20130043032 |