SINGLE-CRYSTAL 4H-SIC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: HAMANO KENICHI, OHNO AKIHITO, TANAKA TAKANORI, KAWAZU ZEMPEI, TOMITA NOBUYUKI, MITANI YOICHIRO
• Format: Patent
• Language: English; Korean
• Published: 07.10.2014
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Obtained are a single-crystal 4H-SiC substrate and a method for manufacturing the same, capable of reducing crystal defects. A flat 4H-SiC bulk single crystal substrate (1) is prepared. A single crystal 4H-SiC layer (3) having a concave portion (2) is epitaxially grown on the 4H-SiC bulk single crystal substrate (1). When the film thickness of the single crystal 4H-SiC layer (3) is X [μm], the diameter Y [μm] of the concave portion (2) is 0.2 × X [μm] to 2 × X [μm], and the depth Z [nm] of the concave portion (2) is 0.95 × X [μm] + 0.5 [nm] to 10 × X [μm].