CHEMICAL DIRECT PATTERN PLATING INTERCONNECT METALLIZATION AND METAL STRUCTURE PRODUCED BY THE SAME

A semiconductor structure with an improved metal structure is described. The semiconductor structure includes a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer includes a patter...

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Bibliographic Details
Main Authors JANG SYUN MING, LIU WEN JIUN, KAO CHEN YUAN, SU HUNG WEN, TSAI MINGHSING
Format Patent
LanguageEnglish
Korean
Published 22.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure with an improved metal structure is described. The semiconductor structure includes a substrate having an upper surface, an interconnect layer over the upper surface, and an additional structure deposited over the interconnect layer. The interconnect layer includes a patterned seed layer over the substrate, at least two metal lines over the seed layer, and a dielectric material between adjacent metal lines. A barrier layer can be deposited over the at least two metal lines. A method of making semiconductor structures is also described.
Bibliography:Application Number: KR20130071148