IMAGE SENSOR WITH IMPROVED DARK CURRENT PERFORMANCE

A semiconductor image sensor device is provided. An image sensor device includes a semiconductor substrate which has a first surface and a second surface facing the first surface. The semiconductor substrate includes a light irradiation detection region for detecting light radiated from the second s...

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Bibliographic Details
Main Authors LIN JENG SHYAN, CHUANG CHUN CHIEH, YAUNG DUN NIAN, KAO MIN FENG, HUNG FENG CHI, TSAI SHUANG JI, LIU JEN CHENG
Format Patent
LanguageEnglish
Korean
Published 19.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor image sensor device is provided. An image sensor device includes a semiconductor substrate which has a first surface and a second surface facing the first surface. The semiconductor substrate includes a light irradiation detection region for detecting light radiated from the second surface to the substrate. A first layer is arranged on the second surface of the semiconductor substrate. The first layer has a first energy band gap. A second layer is arranged on the first layer. The second layer has a second energy band gap. A third layer is arranged on the second layer. The third layer has a third energy band gap. The second energy band gap is less than the first energy band gap and the second energy band gap.
Bibliography:Application Number: KR20130155229