METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH EXTENDED GATE DIELECTRIC LAYER

A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain on the substrate, a gate electrode which is arranged on the substrate between the source and the drain, and a gate dielectric layer which is arranged between the substrate and the gate electrode....

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Bibliographic Details
Main Authors LIN SHIUAN JENG, CHU CHE JUNG, CHENG SHYH WEI
Format Patent
LanguageEnglish
Korean
Published 18.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain on the substrate, a gate electrode which is arranged on the substrate between the source and the drain, and a gate dielectric layer which is arranged between the substrate and the gate electrode. At least a part of the gate dielectric layer is extended toward the source or the drain via the gate electrode.
Bibliography:Application Number: KR20130139921