METHOD OF ETCHING AN ETCH LAYER

A method for etching an etch layer is provided. A glue layer having metallizable terminations is formed over the etch layer. The glue layer is exposed to patterned light, wherein the metallizable terminations of the glue layer illuminated by the patterned light become unmetallizable. A metal deposit...

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Bibliographic Details
Main Author DORDI YEZDI N
Format Patent
LanguageEnglish
Korean
Published 17.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for etching an etch layer is provided. A glue layer having metallizable terminations is formed over the etch layer. The glue layer is exposed to patterned light, wherein the metallizable terminations of the glue layer illuminated by the patterned light become unmetallizable. A metal deposition layer is formed on the glue layer, wherein the metal deposition layer only deposits on areas of the glue layer with metallizable terminations of the glue layer. The etch layer is etched through portions of the glue layer without the metal deposition layer.
Bibliography:Application Number: KR20140027784