ROTATED STI DIODE ON FINFET TECHNOLOGY
A diode includes a plurality of first combo fins with lengthwise directions in parallel to a first direction, wherein the first combo fins include parts of a first conductivity type. The diodes further includes a plurality of second combo fins with the lengthwise directions in parallel to the first...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
17.09.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A diode includes a plurality of first combo fins with lengthwise directions in parallel to a first direction, wherein the first combo fins include parts of a first conductivity type. The diodes further includes a plurality of second combo fins with the lengthwise directions in parallel to the first direction, wherein the second combo fins include parts of a second conductivity type which is opposite to the first conductivity type. An isolation region is located between the first combo fins and the second combo fins. The first and second combo fins form a cathode and an anode of the diode. The diode has a current flowing in a second direction which is perpendicular to the first direction. The current flows between the anode and the cathode. |
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Bibliography: | Application Number: KR20130071153 |