FINFETS AND METHODS FOR FORMING THE SAME

Disclosed are FinFETS and methods for forming the same. A structure includes a substrate, a fin, a gate dielectric and a gate electrode. The substrate includes the fin. The fin has a main surface part of a sidewall. The main surface part includes at least one lattice shift. The at least one lattice...

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Main Authors TSAI MING HUAN, PERNG TSU HSIU, LIU CHI KANG, FAN CHUN HSIANG, LI YUNG TA, WANN CLEMENT HSINGJEN, LIU CHI WEN, HUANG YU LIEN
Format Patent
LanguageEnglish
Korean
Published 04.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are FinFETS and methods for forming the same. A structure includes a substrate, a fin, a gate dielectric and a gate electrode. The substrate includes the fin. The fin has a main surface part of a sidewall. The main surface part includes at least one lattice shift. The at least one lattice shift includes an inside or outside shift with regard to the center of the fin. The gate dielectric is on the main surface part of the sidewall. The gate electrode is on the gate dielectric.
Bibliography:Application Number: KR20130064862