BIPOLAR JUNCTION TRANSISTOR FOR HIGH MATCHING CHARACTERISTICS
In a bipolar junction transistor including two transistors, the two transistors have an independent structure, respectively. The preset direction of an emitter is opened while each base surrounds the emitter. Also, the preset direction of a base is opened when a collector surrounds the base.
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
29.08.2014
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Subjects | |
Online Access | Get full text |
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Summary: | In a bipolar junction transistor including two transistors, the two transistors have an independent structure, respectively. The preset direction of an emitter is opened while each base surrounds the emitter. Also, the preset direction of a base is opened when a collector surrounds the base. |
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Bibliography: | Application Number: KR20140020762 |