SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device according to an embodiment of the present invention comprises an n-type semiconductor layer; a p-type semiconductor layer in which a first impurity region including p-type impurities and a second impurity region including n-type impurities are alternately repeat...

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Bibliographic Details
Main Authors SHIM, HYUN WOOK, LIM, JIN YOUNG, HYUN, JAE SUNG
Format Patent
LanguageEnglish
Korean
Published 28.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor light emitting device according to an embodiment of the present invention comprises an n-type semiconductor layer; a p-type semiconductor layer in which a first impurity region including p-type impurities and a second impurity region including n-type impurities are alternately repeated at least once; and an active layer which is disposed between the n-type and p-type semiconductor layers.
Bibliography:Application Number: KR20130018306