MEMORY SYSTEM AND DRIVING METHOD THEREOF

A driving method of a non-volatile memory device having multiple strings formed by penetrating word lines in an accumulated panel on a substrate-shape according to the present invention comprises a constructing step where the word lines are constructed based on the information on zone construction;...

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Bibliographic Details
Main Authors NAM, SANG WAN, LEE, KANG BIN, KIM, MIN SU, PARK, KI TAE
Format Patent
LanguageEnglish
Korean
Published 21.08.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A driving method of a non-volatile memory device having multiple strings formed by penetrating word lines in an accumulated panel on a substrate-shape according to the present invention comprises a constructing step where the word lines are constructed based on the information on zone construction; and a step of driving by permitting the zone voltage corresponding to the constructed zones. The information on zone construction is changeable by an operating mode.
Bibliography:Application Number: KR20130015295