VOLTAGE ASSISTED STT-MRAM WRITING SCHEME

The present invention relates to a semiconductor memory device and, more particularly, to a semiconductor memory device which includes a magnetic element. The magnetic element according to the embodiment of the present invention includes a reference layer, a free layer, a barrier layer which is loca...

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Main Authors KROUNBI MOHAMAD TOWFIK, ONG ADRIAN E, NIKITIN VLADIMIR
Format Patent
LanguageEnglish
Korean
Published 06.08.2014
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Abstract The present invention relates to a semiconductor memory device and, more particularly, to a semiconductor memory device which includes a magnetic element. The magnetic element according to the embodiment of the present invention includes a reference layer, a free layer, a barrier layer which is located between the reference layer and the reference layer, a first electrode, an insulation layer which is located between the first electrode and the free layer, and a second electrode which is connected to the side of the free layer. According to the present invention, a small amount of currents are used and an error rate is reduced.
AbstractList The present invention relates to a semiconductor memory device and, more particularly, to a semiconductor memory device which includes a magnetic element. The magnetic element according to the embodiment of the present invention includes a reference layer, a free layer, a barrier layer which is located between the reference layer and the reference layer, a first electrode, an insulation layer which is located between the first electrode and the free layer, and a second electrode which is connected to the side of the free layer. According to the present invention, a small amount of currents are used and an error rate is reduced.
Author ONG ADRIAN E
NIKITIN VLADIMIR
KROUNBI MOHAMAD TOWFIK
Author_xml – fullname: KROUNBI MOHAMAD TOWFIK
– fullname: ONG ADRIAN E
– fullname: NIKITIN VLADIMIR
BookMark eNrjYmDJy89L5WTQCPP3CXF0d1VwDA72DA5xdVEIDgnR9Q1y9FUID_IM8fRzVwh29nD1deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhiYGBpZmlpaWjsbEqQIAl2Mm6w
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID KR20140096999A
GroupedDBID EVB
ID FETCH-epo_espacenet_KR20140096999A3
IEDL.DBID EVB
IngestDate Fri Aug 30 05:41:12 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
Korean
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_KR20140096999A3
Notes Application Number: KR20140003012
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140806&DB=EPODOC&CC=KR&NR=20140096999A
ParticipantIDs epo_espacenet_KR20140096999A
PublicationCentury 2000
PublicationDate 20140806
PublicationDateYYYYMMDD 2014-08-06
PublicationDate_xml – month: 08
  year: 2014
  text: 20140806
  day: 06
PublicationDecade 2010
PublicationYear 2014
RelatedCompanies SAMSUNG ELECTRONICS CO., LTD
RelatedCompanies_xml – name: SAMSUNG ELECTRONICS CO., LTD
Score 2.9130566
Snippet The present invention relates to a semiconductor memory device and, more particularly, to a semiconductor memory device which includes a magnetic element. The...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Title VOLTAGE ASSISTED STT-MRAM WRITING SCHEME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140806&DB=EPODOC&locale=&CC=KR&NR=20140096999A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8JAEJ4gPm-KGh9ommgaL42AZW0PxJS2PMQCKRW4kd3tNjGaQmyNf9_ZFZQTx51JZh_JvHZnvgW4ZRWaWDWaGMQ2uWHasTAsuyYMmpCqqMWccyb7nYM-6byaz9P6tAAfq14YhRP6rcARUaM46nuu7PXi_xLLU7WV2T17Q9L8qRU1PH2ZHWO2YFWI7jUb_nDgDVzddRu9UO-HvzwM1zEecrZgWwbSEmnfHzdlX8pi3am0DmFniPLS_AgK7_MS7Lurv9dKsBcsn7xLsKtqNHmGxKUeZsdwNx68RE7b1xw0hiM0PtooiowgdAJtEnajbr-tjSTYgX8CNy0_cjsGTj772-usF66v9OEUiuk8FWeyBIkKzqoxpkvCtHjVtpkVJ4wSmjwSatXPobxJ0sVm9iUcyKGqbCNlKOafX-IKvW3OrtUh_QAecH-r
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bT8IwFD5BvOCbosYL6hLN4ssi4CjbAzFjGxdhg4wKvC1t1yVGA0Rm_Pu2FZQnXnuS00tybu13vgLc0zJJrSpJDWSbzDDthBuWXeUGSVGFVxPGGJX9zkGIOq_my7Q2zcHHuhdG8YR-K3JEYVFM2Hum_PXi_xLLU9jK5SN9E0Pz5xZuePqqOhbVglVGutds-MOBN3B11230Ij2MfmUiXRf5kLMDu3XJzyuTp3FT9qUsNoNK6wj2hkLfLDuG3Pu8CAV3_fdaEQ6C1ZN3EfYVRpMtxeDKDpcn8DAe9LHT9jVHOMORcD7aCGMjiJxAm0Rd3A3b2kiSHfincNfysdsxxOTx317jXrS50qczyM_mM34uIUiEM1pJRLnETYtVbJtaSUoJImkdEat2AaVtmi63i2-h0MFBP-53w94VHEqRQrmhEuSzzy9-LSJvRm_Ugf0APxaCmA
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=VOLTAGE+ASSISTED+STT-MRAM+WRITING+SCHEME&rft.inventor=KROUNBI+MOHAMAD+TOWFIK&rft.inventor=ONG+ADRIAN+E&rft.inventor=NIKITIN+VLADIMIR&rft.date=2014-08-06&rft.externalDBID=A&rft.externalDocID=KR20140096999A