TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS

Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; an...

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Bibliographic Details
Main Authors MARAKHTANOV ALEXEI, YEN BI MING, BAILEY ANDREW D. III, DHINDSA RAHINDER, DELGADINO GERARDO, HUDSON ERIC
Format Patent
LanguageEnglish
Korean
Published 05.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
Bibliography:Application Number: KR20147013660