DIODE BASED ON LDMOS TRANSISTOR AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT INCLUDING THE SAME

A diode based on a lateral double diffused metal semiconductor (LDMOS) transistor includes a cathode electrode and an anode electrode. The cathode electrode includes a gate of a P-type LDMOS transistor and an N-type doping region which is formed in an N-type wall region of the P-type LDMOS transisto...

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Bibliographic Details
Main Authors KO, MIN CHANG, KIM, CHANG SU, JEON, KYOUNG KI, KO, JAE HYOK, KIM, HAN GU
Format Patent
LanguageEnglish
Korean
Published 04.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A diode based on a lateral double diffused metal semiconductor (LDMOS) transistor includes a cathode electrode and an anode electrode. The cathode electrode includes a gate of a P-type LDMOS transistor and an N-type doping region which is formed in an N-type wall region of the P-type LDMOS transistor. The anode electrode includes a P-type doping region which is formed in a P-type drift region of the P-type LDMOS transistor.
Bibliography:Application Number: KR20130008397