SHIFT REGISTER
The present invention relates to a shift register which can prevent the deterioration of a switching element. As for the shift register for sequentially outputting a scan pulse, at least one switching element provided in the shift register is configured to include a gate electrode and a semiconducto...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
01.08.2014
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a shift register which can prevent the deterioration of a switching element. As for the shift register for sequentially outputting a scan pulse, at least one switching element provided in the shift register is configured to include a gate electrode and a semiconductor layer made of an oxidized material, wherein the shortest distance between any one edge of the semiconductor layer and any one edge of the gate electrode is less than or equal to 2 um. In addition, the edge of the semiconductor layer is extended further to the outside than the edge of the gate electrode in order to superpose the edge of the semiconductor layer with the edge of the gate electrode. |
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Bibliography: | Application Number: KR20130007836 |