HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME

A high electron mobility transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is smaller than the first band gap. The HEMT further includes a third III-V co...

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Bibliographic Details
Main Authors CHIU HAN CHIN, LIU PO CHUN, CHEN CHI MING, CHIANG CHEN HAO, YU CHUNG YI
Format Patent
LanguageEnglish
Korean
Published 14.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high electron mobility transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is smaller than the first band gap. The HEMT further includes a third III-V compound layer having a third band gap over the second III-V compound layer, wherein the third band gap is greater than the first band gap. A gate electrode is formed over the third III-V compound layer. A source region and a drain region are over the third III-V compound layer and on opposite sides of the gate electrode.
Bibliography:Application Number: KR20130042750