METHOD FOR PRODUCING NITRIDE CRYSTAL, AND NITRIDE CRYSTAL

The present invention relates to a GaN crystal having a carrier concentration of from 5 x 10 17 to 2 × 10 19 atoms/cm 3 which is obtainable by nitride crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, using a nitride crystal starting mate...

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Bibliographic Details
Main Authors KAWABATA SHINICHIRO, MIKAWA YUTAKA, KAGAMITANI YUJI, FUJISAWA HIDEO, NAGAOKA HIROBUMI, KAMADA KAZUNORI
Format Patent
LanguageEnglish
Korean
Published 09.07.2014
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:The present invention relates to a GaN crystal having a carrier concentration of from 5 x 10 17 to 2 × 10 19 atoms/cm 3 which is obtainable by nitride crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, using a nitride crystal starting material that has a bulk density of from 0.7 to 4.5 g/cm 3 and has an oxygen concentration in the crystal of from 10 to 500 ppm and an acidic mineralizing agent.
Bibliography:Application Number: KR20147012680