SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

A semiconductor device according to one embodiment of the present technique may include: a gate electrode which is formed on a structure sidewall extended from a semiconductor substrate; a bonding region which is formed with a first depth from the upper part of a structure in the structure, and is o...

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Bibliographic Details
Main Author LEE, JANG UK
Format Patent
LanguageEnglish
Korean
Published 26.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to one embodiment of the present technique may include: a gate electrode which is formed on a structure sidewall extended from a semiconductor substrate; a bonding region which is formed with a first depth from the upper part of a structure in the structure, and is overlapped with the gate electrode; and a protective layer which is formed between the outer sidewall of the structure and the gate electrode, and is formed with a second depth which is higher than the first depth from the upper part of the structure.
Bibliography:Application Number: KR20120148668