BACKSIDE CMOS COMPATIBLE BIOFET WITH NO PLASMA INDUCED DAMAGE

The present invention relates to a backside CMOS compatible biological field-effect transistor (BIOFET) with no plasma induced damage. The backside CMOS compatible BIOFET with no plasma induced damage according to one embodiment of the present invention includes a step of forming a FET device on a s...

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Bibliographic Details
Main Authors CHANG YI HSIEN, CHENG CHUN REN, LIU YI SHAO, CHENG CHUN WEN, CHEN CHING RAY, LAI FEI LUNG
Format Patent
LanguageEnglish
Korean
Published 13.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a backside CMOS compatible biological field-effect transistor (BIOFET) with no plasma induced damage. The backside CMOS compatible BIOFET with no plasma induced damage according to one embodiment of the present invention includes a step of forming a FET device on a semiconductor substrate; a step of forming an opening part which exposes the channel region from the second surface of the semiconductor substrate; and a step of forming a detection layer on the channel region of the second surface of the semiconductor substrate.
Bibliography:Application Number: KR20130061900