COMPOSITION FOR REMOVAL OF THE OXIDE LAYER AND THE SCALE AND THE PREPARATION METHOD THEREOF

• Main Authors: RYU, JI CHEOL, LEE, EUL KYU, SEOL, TAE JOON
• Format: Patent
• Language: English; Korean
• Published: 11.06.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a composition for removing scale and an oxide layer existing in an oxide layer, typical iron (Fe), and the alloy thereof of a semiconductor device and a method for preparing the same. In detail, the composition for removing the scale and the oxide layer is prepared by making the composition contain amine neutralizer of ammonium fluoride (NH_3HF), amine neutralizer of ammonium bifluoride (NH_4HF_2), or the mixture thereof. In addition, for the method of prepare the composition for removing the scale and the oxide layer, the ammonium fluoride (NH_3HF), the ammonium bifluoride (NH_4HF_2), and the mixture thereof are dissolved in pure water, and amine is mixed with the resultant to produce the neutralizer of ammonium bifluoride or the amine neutralizer of the ammonium bifluoride. According to the composition for the removal of the oxide layer and the scale and the method of preparing the same, the oxide layer is removed without the damage to the semiconductor substrate, a small amount of waste water is generated, and the composition is not harmful to a human body.