SILICON PRECURSORS, AND DEPOSITING METHOD OF SILICON-CONTAINING THIN FILM

• Main Authors: HAN, WON SEOK, KOH, WON YONG
• Format: Patent
• Language: English; Korean
• Published: 05.06.2014
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a silicon precursor compound and a deposition method for a silicon-containing thin film using the precursor compound. The silicon precursor compound according to one embodiment of the present invention is represented by chemical formula Si(NR12)n(NHR2)m. More specifically, in chemical formula Si(NR12)n(NHR2)m, each of R1 and R2 is H or a linear or a branched C1-5 alkyl group and each of n and m is 1 to 3.