ESD DEVICES COMPRISING SEMICONDUCTOR FINS

A device includes a semiconductor substrate, and an insulating region which is extended from the uppermost surface of the semiconductor substrate to the inner part of the semiconductor substrate. The device further includes a first node, a second node, and an electrostatic discharge (ESD) device whi...

Full description

Saved in:
Bibliographic Details
Main Authors CHANG YI FENG, TSAI TSUNG CHE, LEE JAM WEM
Format Patent
LanguageEnglish
Korean
Published 27.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A device includes a semiconductor substrate, and an insulating region which is extended from the uppermost surface of the semiconductor substrate to the inner part of the semiconductor substrate. The device further includes a first node, a second node, and an electrostatic discharge (ESD) device which is connected between the first node and the second node. The ESD device is adjacent to the upper part of the uppermost surface of the insulating region and includes a semiconductor fin. The ESD device responds to ESD transient on the first node to transmit a current from the first node to the second node.
Bibliography:Application Number: KR20130028597