MULTI-CRYSTALLINE SILICON INGOT AND DIRECTIONAL SOLIDIFICATION FURNACE

An ingot having a mass of greater than about 1000 kg, a method of producing the ingot, and a directional solidification furnace for producing the ingot are disclosed.

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Bibliographic Details
Main Authors MEYER BENJAMIN MICHAEL, DESHPANDE ADITYA, FERRY LEE WILLIAM
Format Patent
LanguageEnglish
Korean
Published 21.05.2014
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:An ingot having a mass of greater than about 1000 kg, a method of producing the ingot, and a directional solidification furnace for producing the ingot are disclosed.
Bibliography:Application Number: KR20147009688