PLASMA PROCESS ETCH-TO-DEPOSITION RATIO MODULATION VIA GROUND SURFACE DESIGN

• Main Authors: KARIM ISHTAK, WU LIQI, QIU HUATAN
• Format: Patent
• Language: English; Korean
• Published: 16.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The plasma deposition controlled by changing a ground path of plasma by attributes of discharge plasma can be used potentially in an arbitrary deposition condition, but discovers a specific direction in an ionized physical vapor deposition (iPVD) gap filling application. Plasma flux ion energy and an E/D ratio are controlled by changing a ground path (location of a ground surface, shape and/or area). The control of plasma attributes can reduce and eliminate the dependence regarding traditional expensive and complex RF systems for the plasma control in this way. Ionized fraction and ion energy can be high enough because the self-sputtering is generated without an arbitrary RF bias. The self-sputtering has a narrow ion energy distribution in contrast with the RF induced sputtering. Therefore, the self-sputtering provides good process control ability and a large process window for integration.