FORMING METHOD OF SILICON-CONTAINING THIN FILM

The present application relates to a method of forming a silicon-containing thin film by using a chlorosilane composite which is expressed as Si_nCl_(2n+2) (here, n is an integer which is about 3 to about 10). Particularly, a silicon nitride thin film which has excellent quality and uniform thicknes...

Full description

Saved in:
Bibliographic Details
Main Authors HAN, WON SEOK, KOH, WON YONG
Format Patent
LanguageEnglish
Korean
Published 15.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present application relates to a method of forming a silicon-containing thin film by using a chlorosilane composite which is expressed as Si_nCl_(2n+2) (here, n is an integer which is about 3 to about 10). Particularly, a silicon nitride thin film which has excellent quality and uniform thickness can be formed on a concavo-convex surface with a high aspect ratio by an atomic layer deposition method using ammonia gas at a low temperature of about 560°C or less.
Bibliography:Application Number: KR20130135071