METHOD FOR ACHIEVING SMOOTH SIDE WALLS AFTER BOSCH ETCH PROCESS
A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the...
Saved in:
Main Authors | , , , , , , , |
---|---|
Format | Patent |
Language | English Korean |
Published |
07.05.2014
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak. |
---|---|
Bibliography: | Application Number: KR20137030018 |