SILICIDE GAP THIN FILM TRANSISTOR

This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate including a silicon layer on the substrate surface is provided. A metal layer is formed on the silicon layer. A first dielectric layer is formed on the metal layer and exp...

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Bibliographic Details
Main Authors HONG JOHN HYUNCHUL, LEE CHONG UK
Format Patent
LanguageEnglish
Korean
Published 02.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate including a silicon layer on the substrate surface is provided. A metal layer is formed on the silicon layer. A first dielectric layer is formed on the metal layer and exposed regions of the substrate surface. The metal layer and the silicon layer are treated, and the metal layer reacts with the silicon layer to form a silicide layer and a gap between the silicide layer and the dielectric layer. An amorphous silicon layer is formed on the first dielectric layer. The amorphous silicon layer is heated and cooled. The amorphous silicon layer overlying the substrate surface cools at a faster rate than the amorphous silicon layer overlying the gap.
Bibliography:Application Number: KR20147007670