THIN FILM TRANSISTOR ARRAY

• Main Authors: LIM, JI HUN, KIM, DAE HWAN, LIM, JUN HYUNG, LEE, JE HUN, KIM, JAE HYEONG, JUNG, HYUN KWANG, AHN, BYUNG DU
• Format: Patent
• Language: English; Korean
• Published: 24.04.2014
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

A thin film transistor array board is provided. A thin film transistor array board according to an embodiment of the present invention includes a substrate, a gate electrode which is located on the substrate, a gate insulating layer which is located on the gate electrode, a semiconductor layer which is located on the gate insulating layer and includes a channel region, a source electrode and a drain electrode which are located on the semiconductor layer and face each other, and a protection layer which covers the source electrode, the drain electrode, and the semiconductor layer. The semiconductor layer includes a first part which is overlapped with the source electrode and the gate electrode, and a second part which is overlapped with the drain electrode and the gate electrode. The first part of the semiconductor layer includes a hill part which protrudes from the first part.