IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

An image senior and a method for fabricating the same are provided. The image sensor includes a well of a second conductivity type which is formed on an impurity layer of a first conductivity type, a source region and a drain region of the first conductivity type which are separated from each other...

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Bibliographic Details
Main Authors LEE, KWANG HYUN, LEE, TAE YON, KIM, TAE CHAN, SUL, SANG CHUL, OH, TAE SEOK, JIN, YOUNG GU, KIM, MIN HO
Format Patent
LanguageEnglish
Korean
Published 22.04.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:An image senior and a method for fabricating the same are provided. The image sensor includes a well of a second conductivity type which is formed on an impurity layer of a first conductivity type, a source region and a drain region of the first conductivity type which are separated from each other in the well, a first photodiode of the first conductivity type which is overlapped with the source region and the drain region in the well, a second photodiode of the first conductivity type which is adjacent to the first photodiode, and a gate electrode which is formed on the first and the second photodiode.
Bibliography:Application Number: KR20130025169