STRUCTURE AND FABRICATION METHOD OF HIGH-VOLTAGE FRD WITH STRONG AVALANCHE CAPABILITY

• Main Authors: SHIM, KYU HWAN, CHO, DEOK HO
• Format: Patent
• Language: English; Korean
• Published: 22.04.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a structure of a high voltage-fast recovery diode (HV-FRD) with improved avalanche resistance and a manufacturing method thereof. The HV-FRD adopts an embedded plug and a buried blocking layer. Also, unique operation and a unique structure such as bidirectional operation and an alternating plug design are provided. The embedded plug has a large diameter and forms a gentle junction to increase breakdown voltage and at the same time reduce leakage current. The buried blocking layer (BBL), together with the embedded plug (EP), restricts movement of a carrier injected into an active area to increase the level of EAS indicating the avalanche performance. Therefore, the structure of a new element given in the present invention adopts the EP and the BBL to control and restrict conduction such as injection of a carrier, thereby being applicable in manufacturing semiconductor elements such as an HV-FRD having large EAS (avalanche energy), an PIN diode, a Zener diode, and a TVS diode.