METHOD FOR FORMING SURFACE PATTERNS OF SAPPHIRE SUBSTRATE

The method according to the present invention comprises: forming a plurality of etch mask patterns for a sapphire substrate on a portion of the sapphire substrate; etching the etch mask pattern to reduce the size thereof; wet-etching the sapphire substrate by using the etch mask pattern with the red...

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Bibliographic Details
Main Authors BAE, JIN HAN, KIM, JAE DAL, RHEE, TAE POK
Format Patent
LanguageEnglish
Korean
Published 21.04.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The method according to the present invention comprises: forming a plurality of etch mask patterns for a sapphire substrate on a portion of the sapphire substrate; etching the etch mask pattern to reduce the size thereof; wet-etching the sapphire substrate by using the etch mask pattern with the reduced size to form a plurality of surface patterns, wherein a side portion of a structure protruding on the surface pattern has a first inclined surface portion which is inclined downwardly at a first angle and a lower planar portion is formed between bottom portions of structures; removing the etch mask pattern with the reduced size to expose a planar upper surface of the structure; and wet-etching the exposed planar upper surface to form a second inclined surface portion which is inclined downwardly at a second angle on the first inclined surface portion, such that a final surface pattern is formed.
Bibliography:Application Number: KR20120110539