HIGHLY SENSITIVE MAGNETIC TUNABLE HETEROJUNCTION DEVICE FOR RESISTIVE SWITCHING

The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive switching (RS) which can be tuned at micro tesla magnetic fiel...

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Bibliographic Details
Main Authors PURI ANIL KUMAR, OGALE SATISHCHANDRA BALKRISHNA, RANA ABHIMANYU SINGH, SARMA DIPANKAR DAS, THAKARE VISHAL PRABHAKAR
Format Patent
LanguageEnglish
Korean
Published 07.04.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive switching (RS) which can be tuned at micro tesla magnetic field at room temperature.
Bibliography:Application Number: KR20147001489