HIGHLY SENSITIVE MAGNETIC TUNABLE HETEROJUNCTION DEVICE FOR RESISTIVE SWITCHING
The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive switching (RS) which can be tuned at micro tesla magnetic fiel...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
07.04.2014
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic CoFe2O4 (CFO) layer capable of giant resistive switching (RS) which can be tuned at micro tesla magnetic field at room temperature. |
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Bibliography: | Application Number: KR20147001489 |