METHOD OF MANUFACTURING FOR SEMICONDUCTOR DEVICE USING EXPANDABLE MATERIAL

Provided is a method of manufacturing a semiconductor device which improves the density of a gap-fill insulating layer by using an expandable material. The method of manufacturing the semiconductor device includes forming a gate insulating layer on a substrate, forming a first and a second gate stru...

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Main Authors OH, KYUNG SEOK, RHA, SANG HO, ZULKARNAIN, KANG, SANG BOM, LEE, JEONG KYU, KIM, SHIN HYE, LEE, SEUNG JAE, LEE, JUNG CHAN
Format Patent
LanguageEnglish
Korean
Published 28.03.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a method of manufacturing a semiconductor device which improves the density of a gap-fill insulating layer by using an expandable material. The method of manufacturing the semiconductor device includes forming a gate insulating layer on a substrate, forming a first and a second gate structure on the gate insulating layer, forming an expandable material on the first and the second gate structures, forming a gap-fill insulating layer between the expandable material and the first and the second gate structures, and performing a thermal process by increasing the volume of the expandable material.
Bibliography:Application Number: KR20120099927