IMPROVED INTERFACE BETWEEN A I-III-VI2 MATERIAL LAYER AND A MOLYBDENUM SUBSTRATE

The present invention relates to a method for fabricating a thin layer made of a I-III-VI alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer on a substrate, b) depositing at least one layer comprising at least e...

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Bibliographic Details
Main Authors JAIME FERRER JESUS SALVADOR, ROCHE EMMANUEL, DELIGIANNI HARIKLIA, ZUPANSKI NIELSEN DONNA S, VAIDYANATHAN RAMAN, ROMANKIW LUBOMYR, REUTER KATHLEEN B, HUANG QIANG, GRAND PIERRE PHILIPPE, MASON MAURICE
Format Patent
LanguageEnglish
Korean
Published 12.03.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a method for fabricating a thin layer made of a I-III-VI alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer on a substrate, b) depositing at least one layer comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.
Bibliography:Application Number: KR20137019771